2SB1181TLR

2SB1181TLR

 
PartNumber2SB1181TLR
DescriptionBipolar Transistors - BJT PNP 80V 1A
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSY
Mounting StyleSMD/SMT
Transistor PolarityPNP
ConfigurationSingle
Collector Emitter Voltage VCEO Max80 V
Collector Base Voltage VCBO- 80 V
Emitter Base Voltage VEBO5 V
Maximum DC Collector Current1 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Series2SB1181
DC Current Gain hFE Max180
Height2.3 mm
Length6.5 mm
PackagingReel
Width5.5 mm
BrandROHM Semiconductor
Continuous Collector Current- 1 A
DC Collector/Base Gain hfe Min180
Pd Power Dissipation1000 mW
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
SubcategoryTransistors
Unit Weight0.009185 oz
Hersteller Teil # Beschreibung RFQ
2SB1181TLR Bipolar Transistors - BJT PNP 80V 1A
2SB1181TLR Bipolar Transistors - BJT PNP 80V 1A
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