2SB1215S-T

2SB1215S-TL-E vs 2SB1215S-TL-H vs 2SB1215S-TL

 
PartNumber2SB1215S-TL-E2SB1215S-TL-H2SB1215S-TL
DescriptionBipolar Transistors - BJT BIP PNP 3A 100VBipolar Transistors - BJT BIP PNP 3A 100V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-252-3-
Transistor PolarityPNPPNP-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 100 V100 V-
Collector Base Voltage VCBO- 120 V--
Emitter Base Voltage VEBO- 6 V- 6 V-
Collector Emitter Saturation Voltage- 0.2 V--
Maximum DC Collector Current- 6 A--
Gain Bandwidth Product fT130 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SB12152SB1215-
DC Current Gain hFE Max400--
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 3 A3 A-
Pd Power Dissipation20 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity700700-
SubcategoryTransistorsTransistors-
DC Collector/Base Gain hfe Min-70-
Unit Weight-0.063493 oz-
Hersteller Teil # Beschreibung RFQ
2SB1215S-TL-E Bipolar Transistors - BJT BIP PNP 3A 100V
2SB1215S-TL Neu und Original
ON Semiconductor
ON Semiconductor
2SB1215S-TL-H Bipolar Transistors - BJT BIP PNP 3A 100V
2SB1215S-TL-H Bipolar Transistors - BJT BIP PNP 3A 100V
2SB1215S-TL-E Bipolar Transistors - BJT BIP PNP 3A 100V
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