2SC3649T stock, 2SC3649T, 2SC3649T-TD-H


PartNumber	2SC3649T-TD-H	2SC3649T-TD-E	2SC3649T-TD
Description	Bipolar Transistors - BJT BIP NPN 1.5A 160V	Bipolar Transistors - BJT BIP NPN 1.5A 160V
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors - Bipolar (BJT) - RF
RoHS	Y	Y	-
Mounting Style	Through Hole	SMD/SMT	SMD/SMT
Package / Case	SOT-89-3	SOT-89-3	-
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	160 V	160 V	-
Collector Base Voltage VCBO	180 V	180 V	-
Emitter Base Voltage VEBO	6 V	6 V	-
Collector Emitter Saturation Voltage	130 mV	- 200 mV, 130 mV	- 200 mV 130 mV
Maximum DC Collector Current	1.5 A	-	-
Gain Bandwidth Product fT	120 MHz	120 MHz	120 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	2SC3649	2SC3649	2SC3649
Packaging	Reel	Reel	Reel
Brand	ON Semiconductor	ON Semiconductor	-
Pd Power Dissipation	500 mW	1.5 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1000	1000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.001973 oz	0.004603 oz	0.004603 oz
Minimum Operating Temperature	-	- 55 C	- 55 C
Continuous Collector Current	-	- 1.5 A, 1.5 A	- 1.5 A 1.5 A
Package Case	-	-	SOT-89
Pd Power Dissipation	-	-	1.5 W
Collector Emitter Voltage VCEO Max	-	-	- 160 V 160 V
Collector Base Voltage VCBO	-	-	- 180 V 180 V
Emitter Base Voltage VEBO	-	-	- 6 V 6 V

Search Part Number : "2SC3649T", Match & Start with "2SC3649T" - Total : 5

Hersteller	Teil #	Beschreibung
	2SC3649T-TD-H	Bipolar Transistors - BJT BIP NPN 1.5A 160V
	2SC3649T-TD-E	Bipolar Transistors - BJT BIP NPN 1.5A 160V
	2SC3649T-TD	Neu und Original
ON Semiconductor	2SC3649T-TD-H	Bipolar Transistors - BJT BIP NPN 1.5A 160V
ON Semiconductor	2SC3649T-TD-E	Bipolar Transistors - BJT BIP NPN 1.5A 160V

2SC3649T