2SC5087-O(T

2SC5087-O(TE85L,F) vs 2SC5087-O(TE85LF)CT-ND vs 2SC5087-O(TE85LF)DKR-ND

 
PartNumber2SC5087-O(TE85L,F)2SC5087-O(TE85LF)CT-ND2SC5087-O(TE85LF)DKR-ND
DescriptionRF Bipolar Transistors RF Device VHF/UHF 13V 150mW 13dB 7GHz
ManufacturerToshiba--
Product CategoryRF Bipolar Transistors--
RoHSY--
Series2SC5087--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max12 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current80 mA--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSMQ-4--
PackagingReel--
Collector Base Voltage VCBO20 V--
DC Current Gain hFE Max240--
Operating Frequency7 GHz (Typ)--
Operating Temperature Range- 55 C to + 125 C--
TypeVHF UHF Low Noise Low Distortion Amplifier--
BrandToshiba--
Pd Power Dissipation150 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
2SC5087-O(TE85L,F) RF Bipolar Transistors RF Device VHF/UHF 13V 150mW 13dB 7GHz
2SC5087-O(TE85L,F) RF Bipolar Transistors RF Device VHF/UHF 13V 150mW 13dB 7GHz
2SC5087-O(TE85LF)CT-ND Neu und Original
2SC5087-O(TE85LF)DKR-ND Neu und Original
Top