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| PartNumber | 2SC5347AF-TD-E | 2SC5347AE-TD-E | 2SC5347E-TD-E |
| Description | Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER | Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER | - Bulk (Alt: 2SC5347E-TD-E) |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PCP-3 | TO-243-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 12 V | 12 V | - |
| Collector Base Voltage VCBO | 20 V | 20 V | - |
| Emitter Base Voltage VEBO | 2 V | 2 V | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 4.7 GHz | 4.7 GHz | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SC5347A | 2SC5347A | - |
| DC Current Gain hFE Max | 270 | 270 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 60 | 60 | - |
| Pd Power Dissipation | 1.3 W | 1.3 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001804 oz | 0.001804 oz | - |
| Technology | - | Si | - |
| Continuous Collector Current | - | 150 mA | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| 2SC5347AF-TD-E | Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER | ||
| 2SC5347AE-TD-E | Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER | ||
| 2SC5347E-TD-E | - Bulk (Alt: 2SC5347E-TD-E) | ||
| 2SC5347F-TD | Neu und Original | ||
ON Semiconductor |
2SC5347AE-TD-E | Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER | |
| 2SC5347AF-TD-E | Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER |