 |  | | |
| PartNumber | 2SC5948-O(Q) | 2SC5948-R(Q) | 2SC5949 |
| Description | Bipolar Transistors - BJT Transistor NPN 200V 12A | Bipolar Transistors - BJT Transistor NPN 200V 12A | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3P-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 200 V | - | - |
| Collector Base Voltage VCBO | 200 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 12 A | 12 A | - |
| Gain Bandwidth Product fT | 30 MHz | 30 MHz (Typ) | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SC5948 | - | - |
| Height | 19 mm | - | - |
| Length | 15.9 mm | - | - |
| Width | 4.8 mm | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 80 at 1 A, 5 V | - | - |
| Pd Power Dissipation | 200000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.238311 oz | 0.238311 oz | - |
| Package Case | - | TO-3P | - |
| Pd Power Dissipation | - | 200000 mW | - |
| Collector Emitter Voltage VCEO Max | - | 200 V | - |
| Collector Base Voltage VCBO | - | 200 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| DC Collector Base Gain hfe Min | - | 55 at 1 A at 5 V | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| 2SC5994-TD-E | Bipolar Transistors - BJT BIP NPN 2A 50V | ||
| 2SC5964-TD-E | Bipolar Transistors - BJT HIGH-CURRENT SWITCHING | ||
| 2SC5964-TD-H | Bipolar Transistors - BJT BIP NPN 3A 50V | ||
| 2SC5948-O(Q) | Bipolar Transistors - BJT Transistor NPN 200V 12A | ||
| 2SC5948-R(Q) | Bipolar Transistors - BJT Transistor NPN 200V 12A | ||
| 2SC5949-O(Q) | Bipolar Transistors - BJT Transistor NPN 200V 15A | ||
| 2SC5949-R(Q) | Bipolar Transistors - BJT Transistor NPN 200V 15A | ||
| 2SC5949 | Neu und Original | ||
| 2SC594M | Neu und Original | ||
| 2SC5950G | Neu und Original | ||
| 2SC5950G0LS0+ | Neu und Original | ||
| 2SC5950G0LS0+ , RF2337 , | Neu und Original | ||
| 2SC5964-TD-E , RF2363TR7 | Neu und Original | ||
| 2SC5979-TL | Neu und Original | ||
| 2SC5980-TL-E | Neu und Original | ||
| 2SC5991-TD-E | Neu und Original | ||
| 2SC59930PSLB | Neu und Original | ||
| 2SC5998YC-TL-E | RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | ||
Toshiba |
2SC5949-O(Q) | Bipolar Transistors - BJT Transistor NPN 200V 15A | |
ON Semiconductor |
2SC5964-S-TD-H | Bipolar Transistors - BJT BIP NPN 3A 50V | |
| 2SC5964-S-TD-E | Bipolar Transistors - BJT BIP NPN 3A 50V | ||
| 2SC5964-S-TD-H | Bipolar Transistors - BJT BIP NPN 3A 50V | ||
| 2SC5964-S-TD-E | Bipolar Transistors - BJT BIP NPN 3A 50V | ||
| 2SC5964-TD-H | Bipolar Transistors - BJT BIP NPN 3A 50V | ||
| 2SC5994-TD-E | Bipolar Transistors - BJT BIP NPN 2A 50V | ||
| 2SC5964-TD-E | Bipolar Transistors - BJT HIGH-CURRENT SWITCHING |