PartNumber | 2SC5949-O(Q) | 2SC5949-R(Q) | 2SC5949 |
Description | Bipolar Transistors - BJT Transistor NPN 200V 15A | Bipolar Transistors - BJT Transistor NPN 200V 15A | |
Manufacturer | Toshiba | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-3P-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 200 V | - | - |
Collector Base Voltage VCBO | 200 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 0.4 V | - | - |
Maximum DC Collector Current | 15 A | - | - |
Gain Bandwidth Product fT | 30 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2SC5949 | - | - |
DC Current Gain hFE Max | 160 | - | - |
Height | 5.2 mm (Max) | - | - |
Length | 26 mm | - | - |
Width | 20.5 mm (Max) | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | 15 A | - | - |
DC Collector/Base Gain hfe Min | 55 | - | - |
Pd Power Dissipation | 220 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 100 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.238311 oz | - | - |