2SC596

2SC5964-TD-E vs 2SC5964-S-TD-H vs 2SC5964-S-TD-E

 
PartNumber2SC5964-TD-E2SC5964-S-TD-H2SC5964-S-TD-E
DescriptionBipolar Transistors - BJT HIGH-CURRENT SWITCHINGBipolar Transistors - BJT BIP NPN 3A 50VBipolar Transistors - BJT BIP NPN 3A 50V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMT--
Package / CasePCP-3--
Transistor PolarityNPN, PNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V, 50 V--
Collector Base Voltage VCBO- 50 V, 100 V--
Emitter Base Voltage VEBO- 6 V, 6 V--
Collector Emitter Saturation Voltage- 125 mV, 100 mV--
Gain Bandwidth Product fT390 MHz, 380 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SC59642SC5964-S-TD-H2SC5964
DC Current Gain hFE Max560--
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Continuous Collector Current-3 A, 3 A--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation3.5 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity100010001000
SubcategoryTransistorsTransistorsTransistors
Hersteller Teil # Beschreibung RFQ
2SC5964-TD-E Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
2SC5964-TD-H Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-TD-E , RF2363TR7 Neu und Original
ON Semiconductor
ON Semiconductor
2SC5964-S-TD-H Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-S-TD-E Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-S-TD-H Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-S-TD-E Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-TD-H Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-TD-E Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
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