PartNumber | 2SCR523EBTL | 2SCR523EB | 2SCR523EB TL |
Description | Bipolar Transistors - BJT NPN General Purpose Amplification Transistor | ||
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | EMT-3F-3 | - | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Collector Base Voltage VCBO | 50 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 0.1 V | 0.1 V | - |
Maximum DC Collector Current | 200 mA | 200 mA | - |
Gain Bandwidth Product fT | 350 MHz | 350 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | 2SCR523EB | 2SCR523EB | - |
DC Current Gain hFE Max | 560 at 1 mA, 6 V | 560 at 1 mA at 6 V | - |
Packaging | Reel | Reel | - |
Brand | ROHM Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 150 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 2SCR523EB | - | - |
Package Case | - | EMT-3F | - |
Pd Power Dissipation | - | 150 mW | - |
Collector Emitter Voltage VCEO Max | - | 50 V | - |
Collector Base Voltage VCBO | - | 50 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
DC Collector Base Gain hfe Min | - | 120 at 1 mA at 6 V | - |