2SD1628G-T

2SD1628G-TD-E vs 2SD1628G-TD-H vs 2SD1628G-TD

 
PartNumber2SD1628G-TD-E2SD1628G-TD-H2SD1628G-TD
DescriptionBipolar Transistors - BJT BIP NPN 5A 20VBipolar Transistors - BJT BIP NPN 5A 20V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePCP-3SOT-89-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max20 V20 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage500 mV500 mV-
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT120 MHz120 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SD16282SD1628-
DC Current Gain hFE Max560 at 500 mA, 2 V560-
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
DC Collector/Base Gain hfe Min12095-
Pd Power Dissipation1.5 W1.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.001823 oz0.004603 oz-
Continuous Collector Current-5 A-
Hersteller Teil # Beschreibung RFQ
2SD1628G-TD-E Bipolar Transistors - BJT BIP NPN 5A 20V
2SD1628G-TD-H Bipolar Transistors - BJT BIP NPN 5A 20V
2SD1628G-TD Neu und Original
ON Semiconductor
ON Semiconductor
2SD1628G-TD-H Bipolar Transistors - BJT BIP NPN 5A 20V
2SD1628G-TD-E Bipolar Transistors - BJT BIP NPN 5A 20V
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