2SJ305TE85

2SJ305TE85LF vs 2SJ305TE85LFCT-ND vs 2SJ305TE85LFDKR-ND

 
PartNumber2SJ305TE85LF2SJ305TE85LFCT-ND2SJ305TE85LFDKR-ND
DescriptionMOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-346-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage2.5 V--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation200 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
Series2SJ305--
Transistor Type1 P-Channel--
Width1.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time0.15 us--
Typical Turn On Delay Time0.06 us--
Unit Weight0.000423 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
2SJ305TE85LF MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
2SJ305TE85LF Darlington Transistors MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
2SJ305TE85LFCT-ND Neu und Original
2SJ305TE85LFDKR-ND Neu und Original
2SJ305TE85LFTR-ND Neu und Original
Top