 | |  | |
| PartNumber | 2SJ661-DL-E | 2SJ661-DL-1E | 2SJ661-DL-1EX |
| Description | MOSFET PCH 4V DRIVE SERIES | MOSFET PCH 4V DRIVE SERIES | MOSFET P-CH D2PAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.077603 oz | 0.077603 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 38 A | - |
| Rds On Drain Source Resistance | - | 29.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.6 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 65 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Series | - | 2SJ661 | - |
| Transistor Type | - | 1 P-Channel | - |
| Fall Time | - | 195 ns | - |
| Rise Time | - | 285 ns | - |
| Typical Turn Off Delay Time | - | 295 ns | - |
| Typical Turn On Delay Time | - | 33 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
2SJ661-DL-E | MOSFET PCH 4V DRIVE SERIES | |
| 2SJ661-DL-1E | MOSFET PCH 4V DRIVE SERIES | ||
| 2SJ661-DL-1E | RF Bipolar Transistors MOSFET PCH 4V DRIVE SERIES | ||
| 2SJ661-DL-E | MOSFET P-CH 60V 38A SMP-FD | ||
| 2SJ661-DL-1EX | MOSFET P-CH D2PAK |