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| PartNumber | 2SK3320-BL(TE85L,F | 2SK3320-BL(TE85L,F) | 2SK3320-BL |
| Description | JFET Junction FET N-Ch x2 1.2V to 14mA 10mA | ||
| Manufacturer | Toshiba | - | Toshiba Semiconductor and Storage |
| Product Category | JFET | - | JFETs (Junction Field Effect) |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | USV-5 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Configuration | Dual | - | - |
| Vds Drain Source Breakdown Voltage | 10 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 30 V | - | - |
| Drain Source Current at Vgs=0 | 6 mA | - | - |
| Id Continuous Drain Current | 14 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Series | 2SK3320 | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Type | JFET | - | - |
| Brand | Toshiba | - | - |
| Gate Source Cutoff Voltage | - 1.5 V | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Package Case | - | - | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | USV |
| FET Type | - | - | N-Channel |
| Power Max | - | - | 200mW |
| Voltage Breakdown V BRGSS | - | - | - |
| Drain to Source Voltage Vdss | - | - | - |
| Current Drain Idss Vds Vgs=0 | - | - | 6mA @ 10V |
| Current Drain Id Max | - | - | - |
| Voltage Cutoff VGS off Id | - | - | 200mV @ 100nA |
| Input Capacitance Ciss Vds | - | - | 13pF @ 10V |
| Resistance RDS On | - | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
2SK3320-BL(TE85L,F | JFET Junction FET N-Ch x2 1.2V to 14mA 10mA | |
| 2SK3320-BL(TE85L,F | JFET Junction FET N-Ch x2 1.2V to 14mA 10mA | ||
| 2SK3320-BL(TE85L,F) | Neu und Original | ||
| 2SK3320-BL | Neu und Original | ||
| 2SK3320-BL(TE85LFCT-ND | Neu und Original | ||
| 2SK3320-BL(TE85LFDKR-ND | Neu und Original | ||
| 2SK3320-BL(TE85LFTR-ND | Neu und Original |