PartNumber | 2ST501T | 2ST5949 |
Description | Darlington Transistors PWR BIP/S.SIGNAL | Bipolar Transistors - BJT High PWR NPN planar bipolar trans |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Darlington Transistors | Bipolar Transistors - BJT |
RoHS | Y | Y |
Configuration | Single | Single |
Transistor Polarity | NPN | NPN |
Collector Emitter Voltage VCEO Max | 350 V | 250 V |
Emitter Base Voltage VEBO | 5 V | 6 V |
Maximum Collector Cut off Current | 500 uA | - |
Pd Power Dissipation | 100 W | 250000 mW |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-3 |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | 2ST501 | 2ST5949 |
Packaging | Tube | Bulk |
Brand | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 4 A | - |
DC Collector/Base Gain hfe Min | 2000 | 80 at 1 A, 5 V, 35 at 7 A, 5 V |
Product Type | Darlington Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 100 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.081130 oz | 0.225789 oz |
Collector Base Voltage VCBO | - | 250 V |
Maximum DC Collector Current | - | 17 A |
Gain Bandwidth Product fT | - | 25 MHz |
DC Current Gain hFE Max | - | 80 |
Height | - | 8.7 mm |
Length | - | 39.5 mm |
Width | - | 26.2 mm |