 |  | | |
| PartNumber | 2V7002KT1G | 2V7002K | 2V7002KLT1G |
| Description | MOSFET NFET 60V 115MA 7MO | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 380 mA | - | - |
| Rds On Drain Source Resistance | 2.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Qg Gate Charge | 700 pC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 420 mW | - | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | 2N7002K | 2N7002K | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 530 mS | - | - |
| Fall Time | 29 ns | 29 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55.8 ns | 55.8 ns | - |
| Typical Turn On Delay Time | 12.2 ns | 12.2 ns | - |
| Unit Weight | 0.000282 oz | 0.050717 oz | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-23 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 300mW | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 24.5pF @ 20V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 320mA (Ta) | - |
| Rds On Max Id Vgs | - | 1.6 Ohm @ 500mA, 10V | - |
| Vgs th Max Id | - | 2.3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 0.7nC @ 4.5V | - |
| Pd Power Dissipation | - | 420 mW | - |
| Id Continuous Drain Current | - | 380 mA | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.3 V | - |
| Rds On Drain Source Resistance | - | 2.5 Ohms | - |
| Qg Gate Charge | - | 0.7 nC | - |
| Forward Transconductance Min | - | 530 mS | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| 2V7002KT1G | MOSFET NFET 60V 115MA 7MO | ||
| 2V7002K | Neu und Original | ||
| 2V7002KLT1G | Neu und Original | ||
ON Semiconductor |
2V7002KT1G | Neu und Original |