55GN01M

55GN01M-TL vs 55GN01M-TL-E vs 55GN01MA

 
PartNumber55GN01M-TL55GN01M-TL-E55GN01MA
Description
ManufacturerSANYOSANYOON Semiconductor
Product CategoryIC ChipsIC ChipsTransistors - Bipolar (BJT) - RF
Series--55GN01MA
Packaging--Tape & Reel (TR)
Mounting Style--SMD/SMT
Package Case--SC-70, SOT-323
Mounting Type--Surface Mount
Supplier Device Package--3-MCP
Power Max--400mW
Transistor Type--NPN
Current Collector Ic Max--70mA
Voltage Collector Emitter Breakdown Max--10V
DC Current Gain hFE Min Ic Vce--100 @ 10mA, 5V
Frequency Transition--4.5GHz ~ 5.5GHz
Noise Figure dB Typ f--1.9dB @ 1GHz
Gain--10dB @ 1GHz
Pd Power Dissipation--400 mW
Collector Emitter Voltage VCEO Max--10 V
Transistor Polarity--NPN
Emitter Base Voltage VEBO--3 V
Continuous Collector Current--70 mA
DC Collector Base Gain hfe Min--200
Hersteller Teil # Beschreibung RFQ
55GN01MA-TL-E Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
55GN01M-TL Neu und Original
55GN01M-TL-E Neu und Original
55GN01MA Neu und Original
ON Semiconductor
ON Semiconductor
55GN01MA-TL-E Neu und Original
Top