 |  |  | |
| PartNumber | 5HN01M-TL-H | 5HN01M-TL | 5HN01M-TL-E |
| Description | MOSFET NCH 4V DRIVE SERIES | MOSFET N-CH 50V 0.1A MCP3 | |
| Manufacturer | ON Semiconductor | - | SANYO |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 100 mA | - | - |
| Rds On Drain Source Resistance | 7.5 Ohms | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | Reel |
| Series | 5HN01M | - | 5HN01M |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000176 oz | - | 0.004395 oz |
| Package Case | - | - | SOT-323-3 |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 75 ns |
| Rise Time | - | - | 11 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 mA |
| Vds Drain Source Breakdown Voltage | - | - | 50 V |
| Rds On Drain Source Resistance | - | - | 5.8 Ohms |
| Typical Turn Off Delay Time | - | - | 105 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
5HN01M-TL-H | MOSFET NCH 4V DRIVE SERIES | |
| 5HN01M-TL-E | MOSFET N-CH 50V 0.1A MCP3 | ||
| 5HN01M-TL-H | MOSFET N-CH 50V 0.1A MCP3 | ||
| 5HN01M-TL | Neu und Original |