 | |  | |
| PartNumber | 71V416S10BEG | 71V416S10BEG8 | 71V416S10BEGI |
| Description | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray - Bulk (Alt: 71V416S10BEGI) |
| Manufacturer | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - |
| Product Category | SRAM | SRAM | - |
| RoHS | Y | Y | - |
| Memory Size | 4 Mbit | 4 Mbit | - |
| Organization | 256 k x 16 | 256 k x 16 | - |
| Access Time | 10 ns | 10 ns | - |
| Interface Type | Parallel | Parallel | - |
| Supply Voltage Max | 3.6 V | 3.6 V | - |
| Supply Voltage Min | 3 V | 3 V | - |
| Supply Current Max | 200 mA | 200 mA | - |
| Minimum Operating Temperature | 0 C | 0 C | - |
| Maximum Operating Temperature | + 70 C | + 70 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | CABGA-48 | CABGA-48 | - |
| Packaging | Tray | Reel | - |
| Height | 1.2 mm | 1.2 mm | - |
| Length | 9 mm | 9 mm | - |
| Memory Type | SDR | SDR | - |
| Series | 71V416S10 | 71V416S10 | - |
| Type | Asynchronous | Asynchronous | - |
| Width | 9 mm | 9 mm | - |
| Brand | IDT | IDT | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | SRAM | SRAM | - |
| Factory Pack Quantity | 250 | 2000 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| Part # Aliases | 71V416 IDT71V416S10BEG | 71V416 IDT71V416S10BEG8 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
IDT |
71V416S10BEG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | |
| 71V416S10BEG8 | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | ||
| 71V416S10BEGI | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray - Bulk (Alt: 71V416S10BEGI) | ||
| 71V416S10BEG8 | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | ||
| 71V416S10BEG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |