 |  | |
| PartNumber | AFM907NT1 | AFM906NT1 |
| Description | RF MOSFET Transistors RF Power | RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V |
| Manufacturer | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | Y | - |
| Transistor Polarity | N-Channel | - |
| Technology | Si | Si |
| Id Continuous Drain Current | 3 A | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Gain | 15 dB | - |
| Output Power | 8 W | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | DFN-16 | HVSON-16 |
| Packaging | Reel | Reel |
| Operating Frequency | 136 MHz to 941 MHz | - |
| Type | RF Power MOSFET | - |
| Brand | NXP Semiconductors | NXP / Freescale |
| Forward Transconductance Min | 9.8 S | - |
| Number of Channels | 1 Channel | - |
| Moisture Sensitive | Yes | Yes |
| Pd Power Dissipation | 65.7 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Vgs Gate Source Voltage | - 6 V , 12 V | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - |
| Part # Aliases | 935346918515 | 935316322515 |
| Unit Weight | 0 oz | 0 oz |
| Series | - | AFM906N |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
NXP Semiconductors |
AFM907NT1 | RF MOSFET Transistors RF Power | |
| AFM906NT1 | WIDEBAND AIRFAST RF POWER LDMOS | ||
| AFM907NT1 | RF MOSFET LDMOS 7.5V 10-DFN | ||
NXP / Freescale |
AFM906NT1 | RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V | |
| AFM906N | Neu und Original |