PartNumber | AFT09MS007NT1 | AFT09MP055NR1 | AFT09MP055GNR1 |
Description | RF MOSFET Transistors LANDMOBILE 7W PLD1.5W | RF MOSFET Transistors MV9 55W 12.5V TO270WB4 | RF MOSFET Transistors MV9 55W 12.5V TO270WB4G |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Polarity | N-Channel | - | - |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 400 mV, 30 V | - | - |
Gain | 15.2 dB | - | - |
Output Power | 7.3 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PLD-1.5 | - | - |
Packaging | Reel | Reel | Reel |
Operating Frequency | 870 MHz | - | - |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Moisture Sensitive | Yes | Yes | Yes |
Pd Power Dissipation | 114 W | - | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 1000 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Part # Aliases | 935318254515 | 935315139528 | 935317959528 |
Unit Weight | 0.009877 oz | 0.057671 oz | 0.057666 oz |