APT200GN60J

APT200GN60J vs APT200GN60JDQ4 vs APT200GN60JDQ4G

 
PartNumberAPT200GN60JAPT200GN60JDQ4APT200GN60JDQ4G
DescriptionIGBT Modules FG, IGBT, 600V, 200A, SOT-227IGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227IGBT 600V 283A 682W SOT227
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT ModulesIGBT ModulesIGBTs - Modules
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.5 V1.5 V-
Continuous Collector Current at 25 C283 A283 A-
Gate Emitter Leakage Current600 nA600 nA-
Pd Power Dissipation682 W682 W-
Package / CaseSOT-227-4SOT-227-4-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
Height9.6 mm9.6 mm-
Length38.2 mm38.2 mm-
Operating Temperature Range- 55 C to + 175 C- 55 C to + 175 C-
Width25.4 mm25.4 mm-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
TradenameISOTOPISOTOP-
Unit Weight1.058219 oz1.058219 oz-
Series---
Package Case--ISOTOP
Mounting Type--Chassis Mount
Supplier Device Package--ISOTOPR
Input--Standard
Configuration--Single
Power Max--682W
Current Collector Ic Max--283A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--50μA
IGBT Type--Trench Field Stop
Vce on Max Vge Ic--1.85V @ 15V, 200A
Input Capacitance Cies Vce--14.1nF @ 25V
NTC Thermistor--No
Hersteller Teil # Beschreibung RFQ
Microchip / Microsemi
Microchip / Microsemi
APT200GN60J IGBT Modules FG, IGBT, 600V, 200A, SOT-227
APT200GN60JDQ4 IGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227
APT200GN60J IGBT Modules
APT200GN60JDQ4 IGBT Modules
APT200GN60JDQ4G IGBT 600V 283A 682W SOT227
APT200GN60JG Neu und Original
APT200GN60JDQ Neu und Original
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