APT24M

APT24M120L vs APT24M80B vs APT24M120B2

 
PartNumberAPT24M120LAPT24M80BAPT24M120B2
DescriptionMOSFET FG, MOSFET, 1200V, TO-264MOSFET FG, MOSFET, 800V, TO-247MOSFET FG, MOSFET, 1200V, TO-247 T-MAX
ManufacturerMicrochipMicrochipMicrochip
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-247-3T-MAX-3
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1.2 kV800 V1.2 kV
Id Continuous Drain Current24 A25 A24 A
Rds On Drain Source Resistance500 mOhms310 mOhms630 mOhms
Vgs th Gate Source Threshold Voltage4 V3 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge260 nC150 nC260 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.040 kW625 W1.04 kW
Channel ModeEnhancementEnhancementEnhancement
TradenamePOWER MOS 8--
PackagingTubeTubeTube
Height5.21 mm--
Length26.49 mm--
Width20.5 mm--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Forward Transconductance Min27 S21 S27 S
Fall Time42 ns33 ns42 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns38 ns27 ns
Factory Pack Quantity111
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time145 ns115 ns145 ns
Typical Turn On Delay Time45 ns26 ns45 ns
Unit Weight0.373904 oz0.211644 oz-
Number of Channels-1 Channel-
Configuration-SingleSingle
Transistor Type-1 N-Channel-
Hersteller Teil # Beschreibung RFQ
Microchip / Microsemi
Microchip / Microsemi
APT24M120L MOSFET FG, MOSFET, 1200V, TO-264
APT24M80B MOSFET FG, MOSFET, 800V, TO-247
APT24M80S MOSFET FG, MOSFET, 800V, TO-268
APT24M120B2 MOSFET FG, MOSFET, 1200V, TO-247 T-MAX
APT24M120L Darlington Transistors MOSFET
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