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| PartNumber | APT33GF120BRG | APT33GF120B2RDQ2G |
| Description | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | - |
| Mounting Style | Through Hole | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 2.5 V | - |
| Maximum Gate Emitter Voltage | 30 V | - |
| Continuous Collector Current at 25 C | 52 A | - |
| Pd Power Dissipation | 297 W | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 52 A | - |
| Height | 5.31 mm | - |
| Length | 21.46 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - |
| Width | 16.26 mm | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 52 A | - |
| Gate Emitter Leakage Current | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT33GF120BRG | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | |
| APT33GF120B2RDQ2G | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS | ||
| APT33GF120BRG | IGBT Transistors | ||
| APT33GF120B2RDQ2G | Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) T-MAX | ||
| APT33GF120B2RD | Neu und Original |