 | | | |
| PartNumber | APT40GL120JU3 | APT40GL120JU2 | APT40GLQ120JCU2 |
| Description | IGBT Modules DOR CC0039 | IGBT Modules HOLD CC0102 | IGBT Modules DOR CC0085 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.85 V | 1.85 V | 2.05 V |
| Continuous Collector Current at 25 C | 65 A | 65 A | 80 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 120 nA |
| Pd Power Dissipation | 220 W | 220 W | 312 W |
| Package / Case | ISOTOP-4 | ISOTOP-4 | ISOTOP-4 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Technology | - | - | Si |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT40GL120JU3 | IGBT Modules DOR CC0039 | |
| APT40GL120JU2 | IGBT Modules HOLD CC0102 | ||
| APT40GLQ120JCU2 | IGBT Modules DOR CC0085 | ||
| APT40GLQ120JCU2 | POWER MOD 1200V 80A SOT227 |