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| PartNumber | APT40GP60B2DQ2G | APT40GP60JDQ2 | APT40GP60BG |
| Description | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 T-MAX, RoHS | IGBT Modules FG, IGBT-COMBI, 600V, 40A, SOT-227 | IGBT Transistors FG, IGBT, 600V, 40A, TO-247, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Modules | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | IGBT Transistors | IGBT Modules | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Product | - | IGBT Silicon Modules | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Collector Emitter Saturation Voltage | - | 2.2 V | - |
| Continuous Collector Current at 25 C | - | 86 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Pd Power Dissipation | - | 284 W | - |
| Package / Case | - | ISOTOP-4 | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | SMD/SMT | - |
| Maximum Gate Emitter Voltage | - | 30 V | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT40GP60B2DQ2G | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 T-MAX, RoHS | |
| APT40GP60SG | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single | ||
| APT40GP60JDQ2 | IGBT Modules FG, IGBT-COMBI, 600V, 40A, SOT-227 | ||
| APT40GP60BG | IGBT Transistors FG, IGBT, 600V, 40A, TO-247, RoHS | ||
| APT40GP60B2DQ2G | IGBT Transistors | ||
| APT40GP60BG | IGBT 600V 100A 543W TO247 | ||
| APT40GP60B | Neu und Original | ||
| APT40GP60B2DF2 | Neu und Original | ||
| APT40GP60B2DQ2 | Neu und Original | ||
| APT40GP60F2 | Neu und Original | ||
| APT40GP60JDF2 | Neu und Original | ||
| APT40GP60J | Trans IGBT Chip N-CH 600V 86A 4-Pin SOT-227 |