 | |  | |
| PartNumber | APT60GF120JRDQ3 | APT60GA60JD60 | APT60GF60JU2 |
| Description | IGBT Modules FG, IGBT-COMBI,1200V, 60A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | IGBT Modules |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | IGBT Modules | IGBT Modules | IGBTs - Modules |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Carbide Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 2 V | 2.1 V |
| Continuous Collector Current at 25 C | 149 A | 112 A | 93 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Pd Power Dissipation | 625 W | 356 W | - |
| Package / Case | ISOTOP-4 | SOT-227-4 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | SMD/SMT | Chassis Mount | Screw |
| Maximum Gate Emitter Voltage | 30 V | 30 V | +/- 20 V |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Height | - | 9.6 mm | - |
| Length | - | 38.2 mm | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Width | - | 25.4 mm | - |
| Tradename | - | POWER MOS 8, ISOTOP | ISOTOP |
| Unit Weight | - | 1.058219 oz | 1.058219 oz |
| Series | - | - | - |
| Package Case | - | - | ISOTOP |
| Mounting Type | - | - | Chassis Mount |
| Supplier Device Package | - | - | SOT-227 |
| Input | - | - | Standard |
| Power Max | - | - | 378W |
| Current Collector Ic Max | - | - | 93A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| Current Collector Cutoff Max | - | - | 80μA |
| IGBT Type | - | - | NPT |
| Vce on Max Vge Ic | - | - | 2.5V @ 15V, 60A |
| Input Capacitance Cies Vce | - | - | 3.59nF @ 25V |
| NTC Thermistor | - | - | No |
| Pd Power Dissipation | - | - | 378 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT60GF120JRDQ3 | IGBT Modules FG, IGBT-COMBI,1200V, 60A, SOT-227 | |
| APT60GA60JD60 | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | ||
| APT60GT60BRG | IGBT Transistors FG, IGBT, 600V, 60A, TO-247, RoHS | ||
| APT60GA60JD60 | IGBT Modules | ||
| APT60GF60JU2 | IGBT Modules | ||
| APT60GT60BRG | IGBT Transistors | ||
| APT60GF120JRDQ3 | IGBT 1200V 149A 625W SOT227 | ||
| APT60GF120JDR | Neu und Original | ||
| APT60GF120JRD | Neu und Original | ||
| APT60GF120JRDX | Neu und Original | ||
| APT60GP60JRD | Neu und Original | ||
| APT60GT120JRD | Neu und Original | ||
| APT60GT60BR | Neu und Original | ||
| APT60GT60JRD | POWER IGBT TRANSISTOR | ||
| APT60GT60JRDX | Neu und Original |