PartNumber | APT80GA60B | APT80GA90B | APT80GA60LD40 |
Description | IGBT Transistors FG, IGBT, 600V, TO-247 | IGBT Transistors FG, IGBT, 900V, TO-247 | IGBT Transistors FG, IGBT-COMBI, 600V, TO-264 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247-3 | TO-264-3 |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 600 V | - | 600 V |
Collector Emitter Saturation Voltage | 2 V | - | 2 V |
Maximum Gate Emitter Voltage | 30 V | - | 30 V |
Continuous Collector Current at 25 C | 143 A | - | 143 A |
Pd Power Dissipation | 625 W | - | 625 W |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 143 A | - | 143 A |
Height | 21.46 mm | - | 5.21 mm |
Length | 16.26 mm | - | 26.49 mm |
Operating Temperature Range | - 55 C to + 150 C | - | - 55 C to + 150 C |
Width | 5.31 mm | - | 20.5 mm |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 143 A | - | 143 A |
Gate Emitter Leakage Current | 100 nA | - | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | POWER MOS 8 | - | POWER MOS 8 |
Unit Weight | 1.340411 oz | 1.340411 oz | 0.373904 oz |