PartNumber | APTGF50DA120CT1G | APTGF50A120T1G | APTGF50DA120T1G |
Description | IGBT Modules Power Module - SiC | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | Dual | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 3.2 V | 3.2 V | 3.2 V |
Continuous Collector Current at 25 C | 75 A | 75 A | 75 A |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Pd Power Dissipation | 312 W | 312 W | 312 W |
Package / Case | SP1-12 | SP1-12 | SP1-12 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 2.821917 oz | 2.821917 oz | 2.821917 oz |