 |  | | |
| PartNumber | APTGF50X60T3G | APTGF50X60P2G | APTGF50XE60E2 |
| Description | IGBT Modules | ||
| Manufacturer | Microsemi Corporation | - | |
| Product Category | IGBTs - Modules | - | Module |
| Series | - | - | - |
| Product | IGBT Silicon Modules | - | - |
| Mounting Style | Screw | - | - |
| Package Case | SP3 | - | - |
| Mounting Type | Chassis Mount | - | - |
| Supplier Device Package | SP3 | - | - |
| Input | Standard | - | - |
| Configuration | Three Phase Inverter | - | - |
| Power Max | 250W | - | - |
| Current Collector Ic Max | 65A | - | - |
| Voltage Collector Emitter Breakdown Max | 600V | - | - |
| Current Collector Cutoff Max | 250μA | - | - |
| IGBT Type | NPT | - | - |
| Vce on Max Vge Ic | 2.45V @ 15V, 50A | - | - |
| Input Capacitance Cies Vce | 2.2nF @ 25V | - | - |
| NTC Thermistor | Yes | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | - | - |
| Continuous Collector Current at 25 C | 65 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Maximum Gate Emitter Voltage | +/- 20 V | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGF50X60T3G | IGBT Modules | |
| APTGF50X60P2G | Neu und Original | ||
| APTGF50XE60E2 | Neu und Original |