 | |  | |
| PartNumber | APTGLQ100A65T1G | APTGLQ100A120T3AG | APTGLQ100A120TG |
| Description | IGBT Modules CC8101 | IGBT Modules CC3165 | IGBT Modules CC4143 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 650 V | 1.2 kV | 1200 V |
| Collector Emitter Saturation Voltage | 1.85 V | 2.05 V | 2.05 V |
| Continuous Collector Current at 25 C | 135 A | 185 A | 170 A |
| Gate Emitter Leakage Current | 150 nA | 150 nA | 150 nA |
| Pd Power Dissipation | 350 W | 650 W | 520 W |
| Package / Case | SP1-12 | SP3-32 | SP4 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 100 C | + 125 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | - | 3.880136 oz |
| Technology | - | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGLQ100A65T1G | IGBT Modules CC8101 | |
| APTGLQ100A120T3AG | IGBT Modules CC3165 | ||
| APTGLQ100DA120T1G | IGBT Modules CC8129 | ||
| APTGLQ100H65T3G | IGBT Modules DOR HOLD CC3214 | ||
| APTGLQ100A120TG | IGBT Modules CC4143 | ||
| APTGLQ100A120T3AG | PWR MOD IGBT4 1200V 185A SP3 | ||
| APTGLQ100A65T1G | PWR MOD IGBT4 650V 200A SP1 |