 | | | |
| PartNumber | APTGT100A120T3AG | APTGT100A120D1G | APTGT100A1202G |
| Description | IGBT Modules DOR CC3135 | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | - | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
| Continuous Collector Current at 25 C | 140 A | 150 A | 140 A |
| Gate Emitter Leakage Current | 400 nA | 300 nA | 400 nA |
| Pd Power Dissipation | 595 W | 520 W | 480 W |
| Package / Case | SP3-32 | D1-7 | SP2-18 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 125 C | + 100 C |
| Packaging | Tube | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 50 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Technology | - | - | Si |
| Unit Weight | - | - | 2.821917 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT100A60T1G | IGBT Modules DOR CC8013 | |
| APTGT100A170TG | IGBT Modules CC4094 | ||
| APTGT100A120TG | IGBT Modules CC4101 | ||
| APTGT100A120T3AG | IGBT Modules DOR CC3135 | ||
| APTGT100A120D1G | IGBT Modules Power Module - IGBT | ||
| APTGT100A1202G | IGBT Modules Power Module - IGBT | ||
| APTGT100A170TG | POWER MOD IGBT TRENCH PH LEG SP4 | ||
| APTGT100A120D1G | IGBT MODULE TRENCH PHASE LEG D1 | ||
| APTGT100A120D1 | Neu und Original |