 | | | |
| PartNumber | APTGT150DA60T1G | APTGT150DH120G | APTGT150DA170G |
| Description | IGBT Modules CC8065 | IGBT Modules DOR CC6245 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Dual | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.5 V | 1.7 V | 2 V |
| Continuous Collector Current at 25 C | 225 A | 220 A | 250 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 600 nA |
| Pd Power Dissipation | 480 W | 690 W | 890 W |
| Package / Case | SP1-12 | SP6 | SP6 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | 3.880136 oz | 3.880136 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT150DA60T1G | IGBT Modules CC8065 | |
| APTGT150DH60TG | IGBT Modules DOR CC4108 | ||
| APTGT150DU120TG | IGBT Modules DOR CC4104 | ||
| APTGT150DU120G | IGBT Modules CC6200 | ||
| APTGT150DH120G | IGBT Modules DOR CC6245 | ||
| APTGT150DH170G | IGBT Modules DOR CC6174 | ||
| APTGT150DA170G | IGBT Modules Power Module - IGBT | ||
| APTGT150DA60T1G | Trans IGBT Module N-CH 600V 225A 480000mW 12-Pin Case SP-1 Tube | ||
| APTGT150DU120TG | IGBT MOD TRENCH DUAL SOURCE SP4 | ||
| APTGT150DA120D1 | Neu und Original |