 | | | |
| PartNumber | APTGT75SK120TG | APTGT75SK60T1G | APTGT75SK170D1G |
| Description | IGBT Modules DOR CC4134 | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.5 V | 2 V |
| Continuous Collector Current at 25 C | 110 A | 100 A | 130 A |
| Gate Emitter Leakage Current | 400 nA | 600 nA | 600 nA |
| Pd Power Dissipation | 357 W | 250 W | 465 W |
| Package / Case | SP4 | SP1-12 | D1-7 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 100 C | + 125 C |
| Packaging | Tube | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 2.821917 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT75SK120TG | IGBT Modules DOR CC4134 | |
| APTGT75SK60T1G | IGBT Modules Power Module - IGBT | ||
| APTGT75SK170D1G | IGBT Modules Power Module - IGBT | ||
| APTGT75SK120TG | IGBT 1200V 110A 357W SP4 |