PartNumber | APTGV100H60T3G | APTGV50H120BTPG | APTGV25H120BG |
Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Full Bridge | Full Bridge | Full Bridge |
Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 1.5 V, 2 V | 1.7 V, 3.2 V | 1.7 V, 3.2 V |
Continuous Collector Current at 25 C | 150 A, 110 A | 75 A, 70 A, 130 A | 40 A, 70 A |
Gate Emitter Leakage Current | 400 nA, 150 nA | 100 nA, 400 nA | 400 nA, 100 nA |
Pd Power Dissipation | 340 W, 416 W | 270 W, 312 W, 650 W | 156 W, 208 W, 312 W |
Package / Case | SP3-32 | SP6-P | SP4 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | - | 3.880136 oz | 3.880136 oz |
Technology | - | - | Si |