AS4C32M16MS

AS4C32M16MS-6BIN vs AS4C32M16MS-7BCN vs AS4C32M16MS-7BCNTR

 
PartNumberAS4C32M16MS-6BINAS4C32M16MS-7BCNAS4C32M16MS-7BCNTR
DescriptionDRAM 512M 1.8V 166MHz 32Mx16 LP MSDRDRAM 512M 1.8V 133MHz 32Mx16 LP MSDRDRAM 512M 1.8V 133MHz 32Mx16 LP MSDR
ManufacturerAlliance MemoryAlliance MemoryAlliance Memory
Product CategoryDRAMDRAMDRAM
RoHSYYY
TypeSDRAM MobileSDRAM MobileSDRAM Mobile
Data Bus Width16 bit16 bit-
Organization32 M x 1632 M x 16-
Package / CaseFBGA-54FBGA-54-
Memory Size512 Mbit512 Mbit-
Maximum Clock Frequency166 MHz133 MHz-
Access Time5 ns5.4 ns-
Supply Voltage Max1.95 V1.95 V-
Supply Voltage Min1.7 V1.7 V-
Supply Current Max50 mA45 mA-
Minimum Operating Temperature- 40 C- 25 C-
Maximum Operating Temperature+ 85 C+ 85 C-
SeriesAS4C32M16MSAS4C32M16MSAS4C32M16MS
PackagingTrayTrayReel
BrandAlliance MemoryAlliance MemoryAlliance Memory
Mounting StyleSMD/SMTSMD/SMT-
Moisture SensitiveYesYesYes
Product TypeDRAMDRAMDRAM
Factory Pack Quantity2642641000
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Hersteller Teil # Beschreibung RFQ
Alliance Memory
Alliance Memory
AS4C32M16MSA-6BINTR DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
AS4C32M16MSA-6BIN DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
AS4C32M16MS-6BIN DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
AS4C32M16MS-7BCN DRAM 512M 1.8V 133MHz 32Mx16 LP MSDR
AS4C32M16MS-7BCNTR DRAM 512M 1.8V 133MHz 32Mx16 LP MSDR
AS4C32M16MSA-6BIN IC DRAM 512M PARALLEL 54FBGA
AS4C32M16MSA-6BINTR IC DRAM 512M PARALLEL 54FBGA
AS4C32M16MS-7BCN IC DRAM 512M PARALLEL 54BGA
AS4C32M16MS-7BCNTR IC DRAM 512M PARALLEL 54BGA
AS4C32M16MS-6BIN DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
AS4C32M16MS-6BINTR DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
Top