 | | | |
| PartNumber | AS6C8016-55BIN | AS6C8016-55BINTR | AS6C8016-55BIN* |
| Description | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM | SRAM |
| Manufacturer | Alliance Memory | Alliance Memory | Alliance Memory |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | - |
| Memory Size | 8 Mbit | 8 Mbit | - |
| Organization | 512 k x 16 | 512 k x 16 | - |
| Access Time | 55 ns | 55 ns | - |
| Interface Type | Parallel | Parallel | - |
| Supply Voltage Max | 5.5 V | 5.5 V | - |
| Supply Voltage Min | 2.7 V | 2.7 V | - |
| Supply Current Max | 60 mA | 60 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TBGA-48 | TBGA-48 | - |
| Packaging | Tray | Reel | Tray |
| Memory Type | SDR | SDR | - |
| Series | AS6C8016 | AS6C8016 | AS6C8016 |
| Type | Asynchronous | Asynchronous | - |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 480 | 2000 | 480 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Unit Weight | 0.014004 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Alliance Memory |
AS6C8016-55BIN | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM | |
| AS6C8016-55BINTR | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM | ||
| AS6C8016-55BINTR* | SRAM | ||
| AS6C8016-55BIN* | SRAM | ||
| AS6C8016-55BINTR | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM | ||
| AS6C8016-55BIN | IC SRAM 8M PARALLEL 48TFBGA |