AT-32063-T

AT-32063-TR1G vs AT-32063-TR2G vs AT-32063-TR1

 
PartNumberAT-32063-TR1GAT-32063-TR2GAT-32063-TR1
DescriptionRF Bipolar Transistors Transistor Si Low CurrentRF Bipolar Transistors Transistor Si Low CurrentRF TRANS 2 NPN 5.5V SOT363
ManufacturerBroadcom LimitedBroadcom Limited-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolar2 NPN (Dual)-
TechnologySiSi-
Transistor PolarityNPNNPN-
DC Collector/Base Gain hfe Min50--
Collector Emitter Voltage VCEO Max5.5 V--
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current32 mA32 mA-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationDualDual-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6--
PackagingReelTape & Reel (TR) Alternate Packaging-
Collector Base Voltage VCBO11 V--
Height1 mm--
Length2.25 mm--
Operating Frequency30000 MHz30000 MHz-
TypeRF Bipolar Small Signal--
Width1.35 mm--
BrandBroadcom / Avago--
Gain Bandwidth Product fT10000 MHz--
Maximum DC Collector Current0.032 A0.032 A-
Pd Power Dissipation150 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000265 oz0.000212 oz-
Series---
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-363-
Power Max-150mW-
Current Collector Ic Max-32mA-
Voltage Collector Emitter Breakdown Max-5.5V-
DC Current Gain hFE Min Ic Vce-50 @ 5mA, 2.7V-
Frequency Transition---
Noise Figure dB Typ f-1.1dB ~ 1.4dB @ 900MHz-
Gain-12.5dB ~ 14.5dB-
Pd Power Dissipation-150 mW-
Collector Emitter Voltage VCEO Max-5.5 V-
Emitter Base Voltage VEBO-1.5 V-
DC Collector Base Gain hfe Min-50 at 5 mA at 2.7 V-
Hersteller Teil # Beschreibung RFQ
Broadcom / Avago
Broadcom / Avago
AT-32063-TR1G RF Bipolar Transistors Transistor Si Low Current
AT-32063-TR2G RF Bipolar Transistors Transistor Si Low Current
AT-32063-TR1G RF TRANS 2 NPN 5.5V SOT363
AT-32063-TR1 RF TRANS 2 NPN 5.5V SOT363
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