PartNumber | ATF-511P8-TR1 | ATF-511P8-TR1G | ATF-511P8-TR1GG |
Description | RF JFET Transistors Transistor GaAs High Linearity | ||
Manufacturer | Broadcom Limited | AVAGO | - |
Product Category | RF JFET Transistors | IC Chips | - |
RoHS | Y | - | - |
Transistor Type | EpHEMT | - | - |
Technology | GaAs | - | - |
Gain | 14.8 dB | - | - |
Vds Drain Source Breakdown Voltage | 7 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
Id Continuous Drain Current | 1 A | - | - |
Maximum Drain Gate Voltage | - 5 V to + 1 V | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3 W | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | LPCC-8 | - | - |
Packaging | Reel | - | - |
Configuration | Single Dual Source | - | - |
Operating Frequency | 2 GHz | - | - |
Product | RF JFET | - | - |
Type | GaAs EpHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 2178 mmho | - | - |
NF Noise Figure | 1.4 dB | - | - |
P1dB Compression Point | 30 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |