ATP6

ATP613-TL-H vs ATP602-TL-H vs ATP602

 
PartNumberATP613-TL-HATP602-TL-HATP602
DescriptionMOSFET 2KB I2C SER EEPROMIGBT Transistors MOSFET POWER MOSFET
ManufacturerON SemiconductorSANYOSANYO
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleSMD/SMT--
Package / CaseATPAK-3-ATPAK (2 leads+tab)
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current5.5 A--
Rds On Drain Source Resistance2 Ohms--
PackagingReel-Cut Tape (CT)
SeriesATP613--
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--600V
Current Continuous Drain (Id) @ 25°C--5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id---
Gate Charge (Qg) (Max) @ Vgs--13.6nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--350pF @ 30V
FET Feature---
Power Dissipation (Max)--70W (Tc)
Rds On (Max) @ Id, Vgs--2.7 Ohm @ 2.5A, 10V
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--ATPAK
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
ATP613-TL-H MOSFET 2KB I2C SER EEPROM
ATP602-TL-H IGBT Transistors MOSFET POWER MOSFET
ATP613-TL-H RF Bipolar Transistors MOSFET 2KB I2C SER EEPROM
ATP602 Neu und Original
ATP6030 Neu und Original
ATP6030BN Neu und Original
ATP6040BN Neu und Original
ATP608-TL-H Neu und Original
ATP60D60B Neu und Original
ATP60DQ60BG Neu und Original
ATP60M75L2FLL Neu und Original
ATP611-TL-H Neu und Original
ATP613 Neu und Original
ATP613 STK830D Neu und Original
ATP68P Neu und Original
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