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| PartNumber | AUIRF7341QTR | AUIRF7341Q |
| Description | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V |
| Id Continuous Drain Current | 5.1 A | 5.1 A |
| Rds On Drain Source Resistance | 65 mOhms | 65 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 29 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Pd Power Dissipation | 2.4 W | 2.4 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR |
| Fall Time | 12.5 ns | 12.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.7 ns | 7.7 ns |
| Factory Pack Quantity | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 31 ns |
| Typical Turn On Delay Time | 9.2 ns | 9.2 ns |
| Part # Aliases | SP001515768 | SP001520152 |
| Unit Weight | 0.019048 oz | 0.019048 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF7341QTR | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | |
| AUIRF7341Q | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | ||
Infineon Technologies |
AUIRF7341QTR | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | |
| AUIRF7341Q | MOSFET 2N-CH 55V 5.1A 8SOIC | ||
| AUIRF7341QTRPBF | Neu und Original | ||
| AUIRF7341QTR-EL | Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC N T/R (Alt: AUIRF7341QTR-EL) | ||
| AUIRF7341QTR. | Neu und Original |