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| PartNumber | AUIRF7341QTR | AUIRF7341QTR-EL | AUIRF7341QTR. |
| Description | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC N T/R (Alt: AUIRF7341QTR-EL) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 5.1 A | - | - |
| Rds On Drain Source Resistance | 65 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 29 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Pd Power Dissipation | 2.4 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 12.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.7 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 31 ns | - | - |
| Typical Turn On Delay Time | 9.2 ns | - | - |
| Part # Aliases | SP001515768 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF7341QTR | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | |
Infineon Technologies |
AUIRF7341QTR | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | |
| AUIRF7341QTRPBF | Neu und Original | ||
| AUIRF7341QTR-EL | Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC N T/R (Alt: AUIRF7341QTR-EL) | ||
| AUIRF7341QTR. | Neu und Original |