AUIRFR1018

AUIRFR1018E vs AUIRFR1018ETRL vs AUIRFR1018ETR

 
PartNumberAUIRFR1018EAUIRFR1018ETRLAUIRFR1018ETR
DescriptionMOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhmsMOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhmsRF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current79 A79 A-
Rds On Drain Source Resistance8.4 mOhms8.4 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge46 nC46 nC-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101-
PackagingTubeReelReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001522694SP001520346-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--110 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--79 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--8.4 mOhms
Qg Gate Charge--46 nC
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
AUIRFR1018E MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRL MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRR RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRL RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018E RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETR RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRLPBF Neu und Original
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