AUIRFR1018ET

AUIRFR1018ETRL vs AUIRFR1018ETRR vs AUIRFR1018ETR

 
PartNumberAUIRFR1018ETRLAUIRFR1018ETRRAUIRFR1018ETR
DescriptionMOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhmsRF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhmsRF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
ManufacturerInfineonInternational RectifierInternational Rectifier
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current79 A--
Rds On Drain Source Resistance8.4 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge46 nC--
Pd Power Dissipation110 W--
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
PackagingReelReelReel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001520346--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-110 W110 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-79 A79 A
Vds Drain Source Breakdown Voltage-60 V60 V
Rds On Drain Source Resistance-8.4 mOhms8.4 mOhms
Qg Gate Charge-46 nC46 nC
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
AUIRFR1018ETRL MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRR RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRL RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETR RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
AUIRFR1018ETRLPBF Neu und Original
Top