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| PartNumber | AUIRFR5305TR | AUIRFR5305TRL | AUIRFR5305TRR |
| Description | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 3.1 A | 31 A | - |
| Rds On Drain Source Resistance | 65 mOhms | 65 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 110 W | 110 W | - |
| Configuration | Single | Single | Single Quint Source |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 63 ns | 63 ns | 63 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 66 ns | 66 ns | 66 ns |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 39 ns | 39 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | SP001517328 | SP001519556 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Qg Gate Charge | - | 63 nC | - |
| Forward Transconductance Min | - | 8 S | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 110 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | - 31 A |
| Vds Drain Source Breakdown Voltage | - | - | - 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 4 V |
| Rds On Drain Source Resistance | - | - | 65 mOhms |
| Qg Gate Charge | - | - | 63 nC |
| Forward Transconductance Min | - | - | 8 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRFR5305TR | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | |
| AUIRFR5305TRL | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | ||
Infineon Technologies |
AUIRFR5305TRR | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | |
| AUIRFR5305TR | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | ||
| AUIRFR5305TRL | MOSFET P-CH 55V 31A DPAK | ||
| AUIRFR5305TRPBF | Neu und Original |