AUIRFR541 stock, AUIRFR541, AUIRFR5410TRL


PartNumber	AUIRFR5410TRL	AUIRFR5410	AUIRFR5410TRR
Description	MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms	MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms	RF Bipolar Transistors MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TO-252-3	TO-252-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	100 V	100 V	-
Id Continuous Drain Current	3.1 A	13 A	-
Rds On Drain Source Resistance	205 mOhms	205 mOhms	-
Vgs Gate Source Voltage	20 V	20 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	-	-
Pd Power Dissipation	66 W	66 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Qualification	AEC-Q101	AEC-Q101	-
Packaging	Reel	Tube	-
Height	2.3 mm	2.3 mm	-
Length	6.5 mm	6.5 mm	-
Transistor Type	1 P-Channel	1 P-Channel	-
Width	6.22 mm	6.22 mm	-
Brand	Infineon / IR	Infineon / IR	-
Fall Time	46 ns	46 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	58 ns	58 ns	-
Factory Pack Quantity	3000	3000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	45 ns	45 ns	-
Typical Turn On Delay Time	15 ns	15 ns	-
Part # Aliases	SP001521222	SP001515888	-
Unit Weight	0.139332 oz	0.139332 oz	-
Qg Gate Charge	-	38.7 nC	-

Search Part Number : "AUIRFR541", Match & Start with "AUIRFR541" - Total : 7

Hersteller	Teil #	Beschreibung
Infineon / IR	AUIRFR5410TRL	MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
Infineon / IR	AUIRFR5410	MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
Infineon Technologies	AUIRFR5410TRR	RF Bipolar Transistors MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
	AUIRFR5410	RF Bipolar Transistors MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
	AUIRFR5410TRL	RF Bipolar Transistors MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
	AUIRFR5410TR	MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
	AUIRFR5410TRPBF	Neu und Original

AUIRFR541