AUIRL1404S

AUIRL1404STRL vs AUIRL1404S

 
PartNumberAUIRL1404STRLAUIRL1404S
DescriptionMOSFET AUTO 40V 1 N-CH HEXFET 4mOhmsMOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V
Id Continuous Drain Current160 A160 A
Rds On Drain Source Resistance4 mOhms4 mOhms
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge93.3 nC93.3 nC
Minimum Operating Temperature- 55 C- 55 C
Pd Power Dissipation200 W200 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelTube
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon / IRInfineon Technologies
Fall Time130 ns130 ns
Product TypeMOSFETMOSFET
Rise Time270 ns270 ns
Factory Pack Quantity8001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time38 ns38 ns
Typical Turn On Delay Time18 ns18 ns
Part # AliasesSP001522830SP001516830
Unit Weight0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
AUIRL1404STRL MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
Infineon Technologies
Infineon Technologies
AUIRL1404S MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
Infineon Technologies
Infineon Technologies
AUIRL1404S RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404STRL MOSFET N-CH 40V 160A D2PAK
AUIRL1404STRR RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
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