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| PartNumber | AUIRLR3410TR | AUIRLR3410TRL | AUIRLR3410TRR |
| Description | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 17 A | 17 A | - |
| Rds On Drain Source Resistance | 105 mOhms | 105 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 34 nC | 34 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 79 W | 79 W | - |
| Configuration | Single | Single | Single Quint Source |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 7.7 S | 7.7 S | - |
| Fall Time | 26 ns | 26 ns | 26 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 53 ns | 53 ns | 53 ns |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
| Typical Turn On Delay Time | 7.2 ns | 7.2 ns | 7.2 ns |
| Part # Aliases | SP001519922 | SP001523020 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 79 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 17 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 105 mOhms |
| Qg Gate Charge | - | - | 34 nC |
| Forward Transconductance Min | - | - | 7.7 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRLR3410TR | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | |
| AUIRLR3410TRL | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | ||
| AUIRLR3410TRR | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | ||
| AUIRLR3410TRL | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | ||
| AUIRLR3410TR | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | ||
| AUIRLR3410TRPBF | Neu und Original | ||
| AUIRLR3410TR-CUT TAPE | Neu und Original |