AUIRLR36

AUIRLR3636TRL vs AUIRLR3636 vs AUIRLR3636TRR

 
PartNumberAUIRLR3636TRLAUIRLR3636AUIRLR3636TRR
DescriptionMOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhmsMOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhmsRF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current99 A99 A-
Rds On Drain Source Resistance8.3 mOhms8.3 mOhms-
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge33 nC33 nC-
Pd Power Dissipation143 W143 W-
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101-
PackagingReelTubeReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001520624SP001520390-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--143 W
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--99 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--8.3 mOhms
Qg Gate Charge--33 nC
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
AUIRLR3636TRL MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
Infineon Technologies
Infineon Technologies
AUIRLR3636 MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TRL IGBT Transistors MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TRR RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636 RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TR MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TRPBF Neu und Original
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