AUIRLR3636T

AUIRLR3636TRL vs AUIRLR3636TR vs AUIRLR3636TRPBF

 
PartNumberAUIRLR3636TRLAUIRLR3636TRAUIRLR3636TRPBF
DescriptionMOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhmsMOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current99 A--
Rds On Drain Source Resistance8.3 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge33 nC--
Pd Power Dissipation143 W--
ConfigurationSingle--
QualificationAEC-Q101--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001520624--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
AUIRLR3636TRL MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
Infineon Technologies
Infineon Technologies
AUIRLR3636TRL IGBT Transistors MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TRR RF Bipolar Transistors MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TR MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TRPBF Neu und Original
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