 |  |  | |
| PartNumber | BC32740TA | BC32740BU | BC32740 |
| Description | Bipolar Transistors - BJT PNP -45V -800mA HFE/630 | Bipolar Transistors - BJT TO-92 PNP GP AMP | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 | - |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | - 45 V | - 45 V | - |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
| Collector Emitter Saturation Voltage | - 0.7 V | - 0.7 V | - 0.7 V |
| Maximum DC Collector Current | 0.8 A | 0.8 A | 0.8 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | BC327 | BC327 | - |
| DC Current Gain hFE Max | 630 | 630 | 630 |
| Height | 4.7 mm | 4.7 mm | - |
| Length | 4.7 mm | 4.7 mm | - |
| Packaging | Ammo Pack | Bulk | Bulk |
| Width | 3.93 mm | 3.93 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | - 0.8 A | - 0.8 A | - 0.8 A |
| Pd Power Dissipation | 625 mW | 625 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BC32740TA_NL | - | - |
| Unit Weight | 0.008466 oz | 0.006314 oz | 0.006314 oz |
| Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-92-3 |
| Power Max | - | - | 625mW |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 800mA |
| Voltage Collector Emitter Breakdown Max | - | - | 45V |
| DC Current Gain hFE Min Ic Vce | - | - | 250 @ 100mA, 1V |
| Vce Saturation Max Ib Ic | - | - | 700mV @ 50mA, 500mA |
| Current Collector Cutoff Max | - | - | 100nA |
| Frequency Transition | - | - | 100MHz |
| Pd Power Dissipation | - | - | 625 mW |
| Collector Emitter Voltage VCEO Max | - | - | - 45 V |
| Emitter Base Voltage VEBO | - | - | - 5 V |
| DC Collector Base Gain hfe Min | - | - | 100 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
BC32740TA | Bipolar Transistors - BJT PNP -45V -800mA HFE/630 | |
| BC32740BU | Bipolar Transistors - BJT TO-92 PNP GP AMP | ||
| BC32740TA_Q | Bipolar Transistors - BJT PNP -45V -800mA HFE/63 | ||
| BC32740 | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | ||
| BC32740TA_NL | Neu und Original | ||
ON Semiconductor |
BC32740BU | Bipolar Transistors - BJT TO-92 PNP GP AMP | |
| BC32740TA | TRANS PNP 45V 0.8A TO-92 |